当本征半导体的电特性通过将杂质引入晶体晶片的表面而改变时,就会制造出高功率激光二极管。当半导体层相遇时,电荷载流子结合,激光能量中的电流以光的形式释放。SemiNex提供功率输出最大在3W-25W之间的激光二极管,波长覆盖1310-1940nm,并且具有体积小、重量轻的优点。
数据中心光通信
OTDR
ToF/FMCW汽车雷达
测风雷达
医疗美容
光纤传感
型号 | 封装形式 | 波长 | 工作模式 | 输出功率 |
TO9-105 | TO9 | 1550nm | CW | 0.4W |
TO9-108 | TO9 | 1640nm | CW | 0.25W |
TO9-116 | TO9 | 1575nm | CW | 1.6W |
TO9-117 | TO9 | 1560nm | Pulsed | 9W |
TO9-126 | TO9 | 1480nm | CW | 1.8W |
TO9-133 | TO9 | 1525nm | Pulsed | 14W |
TO9-140 | TO9 | 1650nm | CW | 0.24W |
TO9-148 | TO9 | 1565nm | Pulsed | 24W |
TO9-149 | TO9 | 1550nm | Pulsed | 30W |
TO9-170 | TO9 | 1625nm | Pulsed | 0.7W |
TO9-174 | TO9 | 1650nm | Pulsed | 0.5W |
TO9-176 | TO9 | 1670nm | Pulsed | 0.4W |
TO9-181 | TO9 | 1450nm | Pulsed | 16W |
TO9-182 | TO9 | 1460nm | Pulsed | 14W |
TO9-184 | TO9 | 1310nm | Pulsed | 20W |
TO9-185 | TO9 | 1360nm | Pulsed | 19W |
TO9-248 | TO9 | 1310nm | CW | 0.4W |
TO9-264 | TO9 | 1550nm | Pulsed | 15W |
TO9-265 | TO9 | 1550nm | Pulsed | 35W |
TO9-266 | TO9 | 1550nm | Pulsed | 52W |
TO9-267 | TO9 | 1550nm | Pulsed | 75W |
TO56-102 | TO56 | 1550nm | Pulsed | 14W |
TO56-103 | TO56 | 1550nm | Pulsed | 24W |
TO56-104 | TO56 | 1550nm | Pulsed | 27W |
TO56-114 | TO56 | 1310nm | Pulsed | 19W |
TO56-201 | TO56 | 1550nm | Pulsed | 9W |
TO56-264 | TO56 | 1550nm | Pulsed | 21W |
TO56-265 | TO56 | 1550nm | Pulsed | 35W |
TO56-266 | TO56 | 1550nm | Pulsed | 52W |
TO56-267 | TO56 | 1550nm | Pulsed | 75W |
TO56x-264 | TO56 | 1550nm | Pulsed | 21W |
TO56x-265 | TO56 | 1550nm | Pulsed | 35W |
TO56x-266 | TO56 | 1550nm | Pulsed | 52W |
TO56x-267 | TO56 | 1550nm | Pulsed | 75W |
TO56m-300 | TO56 | 1550nm | Pulsed | 20W |
TO56m-302 | TO56 | 1550nm | Pulsed | 8W |
TO56s-264 | TO56 | 1550nm | Pulsed | 21W |
TO56s-265 | TO56 | 1550nm | Pulsed | 35W |
TO56s-266 | TO56 | 1550nm | Pulsed | 52W |
TO56s-267 | TO56 | 1550nm | Pulsed | 75W |
COC-101 | Chip on Carrier | 1550nm | Pulsed | 30W |
COC-105 | Chip on Carrier | 1550nm | Pulsed | 9W |
COC-106 | Chip on Carrier | 1550nm | Pulsed | 24W |
COC-107 | Chip on Carrier | 1560nm | Pulsed | 14W |
COC-264 | Chip on Carrier | 1550nm | Pulsed | 20W |
COC-265 | Chip on Carrier | 1550nm | Pulsed | 35W |
COC-266 | Chip on Carrier | 1550nm | Pulsed | 52W |
COC-267 | Chip on Carrier | 1550nm | Pulsed | 75W |
4PN-101 | 4-Pin | 1460nm | CW | 4W |
4PN-104 | 4-Pin | 1480nm | CW | 3.8W |
4PN-108 | 4-Pin | 1550nm | CW | 3.3W |
4PN-116 | 4-Pin | 1320nm | CW | 4.5W |
4PN-117 | 4-Pin | 1375nm | CW | 4.3W |
4PN-134 | 4-Pin | 1470nm | CW | 5W |
14BF-105 | 14-Pin Butterfly | 1550nm | CW | 0.2W |
14BF-106 | 14-Pin Butterfly | 1650nm | CW | 0.18W |
14BF-110 | 14-Pin Butterfly | 1625nm | CW | 0.16W |
14BF-125 | 14-Pin Butterfly | 1310nm | CW | 0.28W |
B-103 | B-Mount | 1310nm | CW | 5.7W |
B-104 | B-Mount | 1450nm | CW | 5W |
B-106 | B-Mount | 1470nm | CW | 5W |
B-115 | B-Mount | 1550nm | CW | 0.6W |
B-118 | B-Mount | 1550nm | CW | 4.2W |
B-122 | B-Mount | 1470nm | CW | 7W |
B-123 | B-Mount | 1375nm | CW | 5.6W |
B-124 | B-Mount | 1660nm | CW | 0.45W |
B-134 | B-Mount | 1650nm | CW | 3.2W |
B-146 | B-Mount | 1625nm | CW | 0.4W |
B-163 | B-Mount | 1310nm | CW | 0.8W |
B-165 | B-Mount | 1940nm | CW | 1.1W |
C-105 | C-Mount | 1480nm | CW | 7W |
C-106 | C-Mount | 1480nm | CW | 5W |
C-116 | C-Mount | 1565nm | CW | 4.2W |
C-121 | C-Mount | 1550nm | CW | 0.6W |
C-123 | C-Mount | 1625nm | CW | 0.4W |
C-124 | C-Mount | 1375nm | CW | 5.6W |
C-128 | C-Mount | 1450nm | CW | 5W |
C-130 | C-Mount | 1320nm | CW | 5.7W |
C-131 | C-Mount | 1650nm | CW | 0.45W |
C-132 | C-Mount | 1650nm | CW | 3.5W |
C-155 | C-Mount | 1310nm | CW | 0.8W |
C-156 | C-Mount | 1940nm | CW | 1.1W |
美国SemiNex公司生产用于军事、医疗、美容和牙科用途的高功率红外激光二极管。采用高精度磷化铟半导体材料制成。在热效率和电效率方面提供了优异的性能,同时也提供了优异的光功率。更好的半导体性能,更高的效率,更小的尺寸和功耗。生产的二极管产品种类繁多,输出功率在3W到52W之间。提供非制冷封装的激光芯片、COS芯片、Bar条、多芯片模块、4 引脚光纤耦合器件、高热负荷器件以及独家专利的激光引擎。同样接受定制各种功率和波长的半导体激光产品。
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