PRODUCTS
Optical Communication Applicat
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Active Component Manufacturing
- Optical LD & PD Wafer
- Aspherical Lens and Cap
- TEC Device
- 2.5G-10G APD CHIP
- 10G PIN PD CHIP
- Transimpedance Amplifier
- Aluminum Nitride Substrates
- Alumina substrates
- High Temperature Co-fired Substrates (HTCC)
- 10G CWDM DFB Chip
- Microlens Array
- Smile Corrector
- Slow Axis Collimators(SAC)
- Fast Axis Collimators Arrays(FACA)
- MEMS Mirror
- SOI Wafers
- Super-thick Thermal Oxidized Wafers
- 25G DFB Laser Diode Chip
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Test and Measurement
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High Speed Qptical Transceiver
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Optical Transport Network Devi
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Network, Security and Delivery
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Optical Automation Equipments
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Passive Component Manufacturin
Industrial Laser and Optical A
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Lasers
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Laser Drivers
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Controller Electronics
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Optical Components
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Materials
Solutions
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BOSA Manufacturing and Packagi
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ECDL Stable Laser Solution
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Laser Spectroscopy Solution
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Slow Axis Collimators(SAC)
category:Brand:Introduce:PowerPhotonic’s range of slow axis collimator (SAC) optics are used to reduce the slow axis divergence of diode lasers. They consist of a monolithic array of cylindrical lenses to simplify system alignment, and are available in a range of standard focal l
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Fast Axis Collimators Arrays(FACA)
category:Brand:Introduce:PowerPhotonic’s range of fast axis collimator (FAC) lens arrays is designed to interface to complete laser diode stacks. They allow the entire diode stack output to be collimated with a single element, providing an ultra-compact and robust solution that r
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MEMS Mirror
category:Brand:Introduce:Capacitive TypeTilt Angle : ±2.25 degChip Size : 1.9 mm X 3.2 mm X 0.5 mmMirror Size : φ1 mmOperating Temp : -5 to 75 degResonant Frequency : >1000 HzDrive Voltage :
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SOI Wafers
category:Brand:Introduce:SOI(Silicon on Insulator)Wafer is a silicon wafer which is a structured single crystalized layer on oxidized layer and used in the field of high speed LSI, low power LSI, powerdevice, MEMS.
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Super-thick Thermal Oxidized Wafers
category:Brand:Introduce:With respect to optical waveguides (AWG), the so-called undercladding layer, which is the lowermost SiO2 film, has a critical effect on the process yield.
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25G DFB Laser Diode Chip
category:Brand:Introduce:1310 nm Distributed Feed-Back (DFB) laser diode chip for 25 Gb/s operation. It is designed for use in the dry N2 hermetic sealed package.